KF6N60D – N CHANNEL MOS FIELD EFFECT TRANSISTOR

Part Number : KF6N60D

Function : N CHANNEL MOS FIELD EFFECT TRANSISTOR

Manufactures : KEC

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KF6N60D image

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Description :

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 5A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC 1 2 3 KF6N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60D A C K D L B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 K 2.30 + _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 0.1 MAX O MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 PD Derate above25 Tj Tstg 0.56 150 -55 150 W/ 1 1. GATE 2. DRAIN 3. SOURCE O SYMBOL VDSS VGSS ID RATING KF6N60D/I 600 30 5 3.15 UNIT V V A DPAK (1) KF6N60I H J m IDP EAS EAR dv/dt CN ãt —écˆg O m w N 15- 180 4 B D A C co DIM A B MILLIMETERS h. mJ K M _ 0.2 6.6 + _ 0.2 6.1 + _ 0.3 5.34 + _ 0.2 0.7 + _ 0.3 9.3 + _ 0.2 2.3 + _ 0.1 0.76 + _ 0.1 2.3 + _ 0.1 0.5 + _ 0.2 1.8 + _ 0.1 0.5 + _ 0.1 1.0 + 0.96 MAX _ 0.3 1.02 + -s kb mJ V/ns P N C D E F G .c w w 4.5 w G E H 69.4 W F F L J K L M Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient 2 3 1. GATE 2. DRAIN 3. SOURCE N P RthJC RthJA 1.8 110 /W IPAK(1) /W – : Drain current limited by maximum junction temperature. PIN CONNECTION D G S 2011. 7. 25 Revision No : 0 1/6 KF6N60D/I ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V 600 2.5 0.6 1.2 10 4.5 100 1.4 V V/ A V nA VGS=10V, ID=2.5A Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings —écˆg CN ãt Qg Qgs Qgd td(on) tr td(off) tf VDD=300V, ID=6A RG=25 VGS=10V (Note4,5) VDS=480V, ID=6A VGS=10V (Note4,5) – 16 3.1 6.0 20 20 50 20 710 80 8.0 ns pF nC w Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP w N m w O w .c kb Crss -s h. Coss VDS=25V, VGS=0V, f=1.0MHz co m Ciss – VGS

KF6N60D Datasheet


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