KIA7N60H PDF Datasheet – 7.0A, 600V, N-Ch, MOSFET

This post explains for the MOSFET.

The Part Number is KIA7N60H.

The function of this semiconductor is N-CHANNEL MOSFET.

The package is TO-220, TO-220F, TO-263 Type

Manufacturer: KIA Semiconductor

Preview images :

1 page
KIA7N60H transistor pinout

Description

KIA7N60H is 600V, 7A, N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor).

This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Features

1. RDS(on)=1.0Ω @ VGS=10V

2. Ultra low gate charge (typical 27nC)

3. Low reverse transfer capacitance

4. Fast switching capability

5. Avalanche energy tested

6. Improved dv/dt capability, high ruggedness

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7 A

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

 

KIA7N60H pdf datasheet

 

KIA7N60H PDF Datasheet

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