MDD1903 – Single N-channel Trench MOSFET

Part Number : MDD1903

Function : Single N-channel Trench MOSFET

Manufactures : MagnaChip

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MDD1903 image

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Description :

MDD1903 – Single N-Channel Trench MOSFET 100V Preliminary – Subject to change without notice MDD1903 Single N-channel Trench MOSFET 100V, 11A, 120mΩ General Description The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1903 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 11A @VGS = 10V  RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) TC=25oC TC=100oC TC=25oC TC=100oC S Symbol VDSS VGSS ID IDM PD TJ, Tstg Rating 100 ±20 11 7.3 30 39 15 -55~150 Unit V V A A A W oC Symbol RθJA RθJC Rating 52 3.2 Unit oC/W Jan. 2011. Version 2.0 1 MagnaChip Semiconductor Ltd. MDD1903 – Single N-Channel Trench MOSFET 100V Preliminary – Subject to change without notice Ordering Information Part Number MDD1903RH Temp. Range -55~150oC Package D-PAK Packing Tape & Reel Rohs Status Halogen Free Electrical Characteristics (Tc =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VSD trr Qrr Note : 1. Surface mounted RF4 board with 2oz. Copper. Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V VGS = 10V, ID = 10A VGS = 6.0V, ID = 10A VDS = 10V, ID = 10A VDS = 80V, ID = 10A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz VDS=50V, VGS=10V, RL=5Ω, RGEN=3.3Ω IS = 10A, VGS = 0V IF = 10A, dl/dt = 100A/μs Min Typ Max Unit 100 - - V 1.0 2.0 3.0 -- 1 μA - - ±0.1 - 120 mΩ - 135 - 18 - S - 11.7 20 - 1.6 - nC - 5.3 - - 525 830 - 27 - pF - 63 - - 8.4 - 11.6 - 42.6 ns - 16.6 - 0.7 1.2 V - 50 ns - 77 nC Jan. 2011. Version 2.0 2 MagnaChip Semiconductor Ltd. MDD1903 – Single N-Channel Trench MOSFET 100V Package Dimension Preliminary – Subject to change without notice D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified Jan. 2011. Version 2.0 3 MagnaChip Semiconductor Ltd. Preliminary – Subject to change without notice MDD1903 – Single N-Channel Trench MOSFET 100V [...]

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MDD1903 Datasheet


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