MDD3752RH – P-Channel Trench MOSFET

Part Number : MDD3752RH

Function : P-Channel Trench MOSFET

Manufactures : MagnaChip

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MDD3752RH image

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pinout

Description :

MDD3752 – P-Channel Trench MOSFET MDD3752 P-Channel Trench MOSFET, -40V, -43A, 17mΩ General Description The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. Features    VDS = -40V ID = -43A @VGS = -10V RDS(ON) < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V Applications   Inverters General purpose applications D G S Absolute Maximum Ratings (TC =25o) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25 C TC=100 C (Note 3) o o Symbol VDSS VGSS Rating -40 ±20 43 Unit V V A A A W (Note 2) TC=25 C TC=100 C o o ID IDM PD EAS TJ, Tstg 27 -90 50 20 128 -55~+150 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating 40 2.5 Unit o C/W November 2008. Version 1.0 1 MagnaChip Semiconductor Ltd. MDD3752 – P-Channel Trench MOSFET Ordering Information Part Number MDD3752RH Temp. Range -55~150oC Package D-PAK Packing Tape & Reel RoHS Status Halogen Free Electrical Characteristics (TJ =25oC unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note : 1. 2. 3. Surface mounted RF4 board with 2oz. Copper. PD is based on TJ(MAX)=150OC, PD(TC=25OC) is based on Rθ JC. Starting TJ=25°C, L=1mH, IAS=-16A VDD=-20V, VGS=-10V Symbol Test Condition Min Typ Max Unit BVDSS VGS(th) IDSS IGSS RDS(ON) gFS ID = -250μA, VGS = 0V VDS = VGS, ID = -250μA VDS = -32V, VGS = 0V VGS = ±20V, VDS = 0V VGS = -10V, ID = -20A VGS = -4.5V, ID = -10A VDS = -10V, ID = -20A -40 -1.0 - -2.0 V -3.0 -1 μA 13 19 40 ±0.1 17 25 mΩ S Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VGS = -10V ,VDD = -20V, ID = -1A, RGEN=6.0Ω VDS = -20V, VGS = 0V, f = 1.0MHz VDD = -20V, ID = -20A, VGS = -10V - 44.1 8.6 9.3 2088 168 290 17.6 17.8 59.0 19.8 ns pF nC VSD trr Qrr IS = -20A, VGS = 0V IS = -20A, di/dt=100A/us - 40 40 1.2 - V ns nC November 2008. Version 1.0 2 MagnaChip Semiconductor Ltd. MDD3752 – P-Channel Trench MOSFET 25 VGS = -10V -8V 3.0 2.8 Normalized Drain-Source On-Resistance -4.5V -4.0V 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 VGS = -3.5V -4V -4.5V 20 -ID, Drain Current [A] 15 -5V 10 -6V -8V [...]

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MDD3752RH Datasheet


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