MDD3754 – P-Channel Trench MOSFET

Part Number : MDD3754

Function : P-Channel Trench MOSFET

Manufactures : MagnaChip

Images :

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MDD3754 image

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pinout

Description :

MDD3754 – P-Channel Trench MOSFET MDD3754 P-Channel Trench MOSFET, -40V, -24.4A, 43mΩ General Description The MDD3754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. Features VDS = -40V ID = -24.4A @VGS = -10V RDS(ON) < 43mΩ @ VGS = -10V < 58mΩ @ VGS = -4.5V Applications Inverters General purpose applications D G Absolute Maximum Ratings (TC =25o) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Characteristics (Note 2) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC TC=100oC (Note 3) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC S Rating -40 ±20 -24.4 -15.4 -50 41.7 16.7 40.5 -55~+150 Unit V V A A A W mJ oC Rating 40 3.0 Unit oC/W October 2008. Version 1.0 1 MagnaChip Semiconductor Ltd. MDD3754 – P-Channel Trench MOSFET Ordering Information Part Number MDD3754RH Temp. Range -55~150oC Package TO-252 Packing Tape & Reel RoHS Status Halogen Free Electrical Characteristics (TJ =25oC unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gFS Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VSD trr Qrr Test Condition ID = -250µA, VGS = 0V VDS = VGS, ID = -250µA VDS = -32V, VGS = 0V VGS = ±20V, VDS = 0V VGS = -10V, ID = -6A VGS = -4.5V, ID = -4A VDS = -10V, ID = -6A VDD = -28V, ID = -6A, VGS = 10V VDS = -25V, VGS = 0V, f = 1.0MHz VGS = -10V ,VDD = -20V, ID = -1A, RGEN=3.3Ω IS = -6A, VGS = 0V IS = -6A, di/dt=100A/us Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. PD is based on TJ(MAX)=150OC, PD(TC=25OC) is based on RθJC. 3. Starting TJ=25°C, L=1mH, IAS=-9A VDD=-20V, VGS=-10V Min Typ Max Unit -40 -1.0 -2.0 -- 32 43 12 V -3.0 -1 µA ±0.1 43 mΩ 58 -S - 19.2 - - 3.1 - nC - 4.4 - - 868 - - 72 - pF - 125 - - 11.0 - - 21.4 - ns - 32.5 - - 15.0 - - -0.88 1.2 V - 37 - ns - 24 - nC October 2008. Version 1.0 2 MagnaChip Semiconductor Ltd. -ID, Drain Current [A] MDD3754 – P-Channel Trench MOSFET RDS(ON), (Normalized) Drain-Source On-Resistance 25 VGS = -10V -8V -4.5V 20 -4.0V 15 10 5 -3.0V 0 0.0 0.5 1.0 [...]

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MDD3754 Datasheet


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