MDD7N25 – N-Channel MOSFET

Part Number : MDD7N25

Function : N-Channel MOSFET

Manufactures : MagnaChip

Images :

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MDD7N25 image

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pinout

Description :

MDD7N25 N-channel MOSFET 250V MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω General Description The MDDN25 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD7N25 is suitable device for SMPS, HID and general purpose applications. Features  VDS = 250V  ID = 6.2A  RDS(ON) ≤ 0.55Ω Applications  Power Supply  PFC  LED TV @VGS = 10V D Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Avalanche current(1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Nov. 2011 Version 1.0 1 Symbol VDSS VGSS ID IDM PD dv/dt EAR IAR EAS TJ, Tstg Symbol RθJA RθJC Rating 250 ±30 6.2 3.9 25 56 0.02 4.5 0.4 5.6 115 -55~150 Unit V V A A A W W/ oC V/ns mJ A mJ oC Rating 110 2.2 Unit oC/W MagnaChip Semiconductor Ltd. MDD7N25 N-channel MOSFET 250V Ordering Information Part Number MDD7N25RH Temp. Range -55~150oC Package D-pak Packing Reel and Tape RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf IS VSD trr Qrr Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 250V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 3.1A VDS = 30V, ID = 3.1A VDS = 200V, ID = 7A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 125V, ID = 7A, RG = 25Ω IS = 6.2A, VGS = 0V IF = 6.2A, dl/dt = 100A/μs(3) Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤6.2A, di/dt≤300A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=4.8mH, IAS=6.2A, VDD=50V, Rg =25Ω, Starting TJ=25°C Min 250 3.0 – – – Typ 0.43 3.0 10.4 2.5 4.7 370 7.5 77.5 12 43 21 34 140 0.63 Max Unit 5.0 1 100 0.55 – V μA nA Ω S – – nC – – – pF – – ns – – 6.2 A 1.4 V – ns – μC Nov. 2011 Version 1.0 2 MagnaChip Semiconductor Ltd. ID,Drain Current […]

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MDD7N25 Datasheet


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