MDF10N65B – N-Channel MOSFET

Part Number : MDF10N65B

Function : N-Channel MOSFET

Manufactures : MagnaChip

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MDF10N65B image

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Description :

MDF10N65B N-channel MOSFET 650V MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω General Description The MDF10N65B MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDF10N65B is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 650V  ID = 10.0A  RDS(ON) ≤ 1.0Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range – Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) G S Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg Rating 650 ±30 10.0- 5.0- 40- 47.7 0.38 15 4.5 212 -55~150 Symbol RθJA RθJC Rating 62.5 2.62 Unit V V A A A W W/oC mJ V/ns mJ oC Unit oC/W Jun. 2010 Version 1.2 1 MagnaChip Semiconductor Ltd. MDF10N65B N-channel MOSFET 650V Ordering Information Part Number MDF10N65BTH Temp. Range -55~150oC Package TO-220F Packing Tube Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf IS VSD trr Qrr Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 650V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 4A VDS = 30V, ID = 4A VDS = 520V, ID = 8.0A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 325V, ID = 8.0A, RG = 25Ω(3) IS = 8.0A, VGS = 0V IF = 8.0A, dl/dt = 100A/μs(3) Min 650 2.0 – – – – Note : 1. 2. 3. 4. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. ISD ≤8.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C L=7.0mH, IAS=8.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C, RoHS Status Halogen Free Typ Max Unit -V – 4.0 – 1 μA – 100 nA 0.85 1.0 Ω 10.6 – S 29.3 7.0 11.2 1202 7.08 128.3 19. […]

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MDF10N65B Datasheet

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