MDF4N60 – N-Channel MOSFET

Part Number : MDF4N60

Function : N-Channel MOSFET

Manufactures : MagnaChip

Images :

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MDF4N60 image

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pinout

Description :

MDP4N60/MDF4N60 N-channel MOSFET 600V MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 4.6A  RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220 MDP Series TO-220F MDF Series G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range – Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP4N60 MDF4N60 600 ±30 4.6 4.6- 2.9 2.9- 18.4 18.4- 92.5 34.7 0.74 0.28 9.25 4.5 170 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) May. 2011 Version 1.5 Symbol RθJA RθJC MDP4N60 62.5 1.35 MDF4N60 62.5 3.6 Unit oC/W 1 MagnaChip Semiconductor Ltd. MDP4N60/MDF4N60 N-channel MOSFET 600V Ordering Information Part Number MDP4N60TH MDF4N60TH MDP4N60TP MDF4N60TP Temp. Range -55~150oC -55~150oC -55~150oC -55~150oC Package TO-220 TO-220F TO-220 TO-220F Packing Tube Tube Tube Tube RoHS Status Halogen Free Halogen Free Pb Free Pb Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Drain Cut-Off Current IDSS Gate Leakage Current IGSS Drain-Source ON Resistance RDS(ON) Forward Transconductance Dynamic Characteristics gfs Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge Qgs Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Turn-On Delay Time Coss td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IS VSD trr Qrr Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 2.3A VDS = 30V, ID = 2.3A VDS = 480V, ID = 4.6A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 300V, ID = 4.6A, RG = 25Ω(3) IS = 4.6A, VGS = 0V IF = 4.6A, dl/dt = 100A/μs(3) Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperatur […]

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MDF4N60 Datasheet


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