MDF7N60B – N-Channel MOSFET

Part Number : MDF7N60B

Function : N-Channel MOSFET

Manufactures : MagnaChip

Images :

1 page
MDF7N60B image

2 page
pinout

Description :

MDP7N60B / MDF7N60B N-channel MOSFET 600V MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G TO-220 MDP Series TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range – Id limited by maximum junction temperature TC=25 C Derate above 25 C o o Symbol VDSS VDSS @ Tjmax VGSS TC=25 C TC=100 C IDM PD EAR dv/dt EAS TJ, Tstg o o MDP7N60B 600 660 ±30 7.0 4.4 28 131 1.05 13.1 4.5 220 MDF7N60B Unit V V V ID 7.0- 4.4- 28- 42 0.33 A A A W W/ oC mJ V/ns mJ o -55~150 C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case(1) (1) Symbol RθJA RθJC MDP7N60B 62.5 0.95 MDF7N60B 62.5 3.01 Unit o C/W June. 2010 Version 1.3 1 MagnaChip Semiconductor Ltd. Free Datasheet http:// MDP7N60B / MDF7N60B N-channel MOSFET 600V Ordering Information Part Number MDP7N60BTH MDF7N60BTH Temp. Range -55~150 C -55~150 C o o Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free Electrical Characteristics (Ta = 25oC Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤7.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=8.2mH, IAS=7.0A, Symbol Test Condition Min Typ Max Unit BVDSS VGS(th) IDSS IGSS RDS(ON) gfs ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 3.5A VDS = 30V, ID = 3.5A 600 2.0 – 1.0 4.0 1 100 1.15 – V µA nA Ω S – 7.5 Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf […]

3 page
image

MDF7N60B Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.