MDS1653 – Single N-Channel Trench MOSFET

Part Number : MDS1653

Function : Single N-Channel Trench MOSFET

Manufactures : MagnaChip

Images :

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MDS1653 image

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pinout

Description :

MDS1653 – Single N-channel Trench MOSFET 30V MDS1653 Single N-Channel Trench MOSFET 30V, 12A, 12mΩ General Description The MDS1653 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. MDS1653 is suitable device for DC-DC Converters and general purpose applications. Features à VDS = 30V à ID = 12A @VGS = 10V à RDS(ON) < 12.0mΩ @VGS = 10V < 17.5mΩ @VGS = 4.5V Applications à DC-DC Converters 6(D) 5(D) 7(D) 8(D) D 4(G) 2(S)3(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation (1) Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case G Ta=25oC Ta=100oC Ta=25oC Ta=100oC Feb. 2011. Version 1.1 1 S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 30 ±20 12 8.6 50 2.5 1.25 50 -55~150 Unit V V A A A W mJ oC Symbol RθJA RθJC Rating 50 25 Unit oC/W MagnaChip Semiconductor Ltd. MDS1653 – Single N-channel Trench MOSFET 30V Ordering Information Part Number MDS1653URH Temp. Range -55~150oC Package SOIC-8 Packing Tape & Reel ROHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Qg(10V) Qg(4.5V) Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VSD trr Qrr Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25°C, L = 1mH, IAS = 10A, VDD = 15V, VGS = 10V. Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS = 10V, ID = 12A VGS = 4.5V, ID = 10A VDS = 5V, ID = 12A VDS = 15V, ID = 12A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 15V, RL = 3Ω, RG = 3Ω IS = 1A, VGS = 0V IF = 12A, dl/dt = 100A/μs Min Typ Max Unit 30 - - V 1.0 1.9 3.0 --1 μA - - ±0.1 - 8.5 12.0 mΩ - 12.0 17.5 - 19 - S 17.5 - 9.0 - 3.0 nC - - 3.5 - - 956 - 108 pF - 190 - 7.2 - - 23.6 ns - 25.2 - - 10.6 - - 0.72 1.0 V - 19 21 ns - 9 12 nC Feb. 2011. Version 1.1 2 MagnaChip Semiconductor Ltd. ID, Drain Current[A] MDS1653 – Single N-channel Trench MOSFET 30V 100 10V 6.0V 80 5.0V 4.5V 60 4.0V 40 3.5V 20 3.0V 0 01234 VDS, Drain-Source Voltage [V] Fig.1 On-Region Characteristics 5 1.6 ※ Notes : 1. VGS = [...]

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MDS1653 Datasheet


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