MDS3604 – Single P-Channel Trench MOSFET

Part Number : MDS3604

Function : Single P-Channel Trench MOSFET

Manufactures : MagnaChip

Images :

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MDS3604 image

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pinout

Description :

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ General Description The MDS3604 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS = -30V ID = -11A @VGS = -10V RDS(ON) < 10.0mΩ @VGS = -20V < 12.1mΩ @VGS = -10V < 18.3mΩ @VGS = -5V Applications Load Switch General purpose applications Smart Module for Note PC Battery 6(D) 7(D) 8(D) 5(D) D 2(S) 1(S) 4(G) 3(S) G S Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range (Note 2) (Note 1) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating -30 ±25 -11 -44 2.5 84.5 -55~150 Unit V V A A W mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating 50 25 Unit o C/W May. 2011 Version 1.1 1 MagnaChip Semiconductor Ltd. Free Datasheet http:/// MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ Ordering Information Part Number MDS3604URH Temp. Range -55~150 C o Package SOIC-8 Packing Tape & Reel Quantity 3000 units RoHS Status Halogen Free Electrical Characteristics (Ta = 25oC unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current BVDSS VGS(th) IDSS IGSS ID = -250µA, VGS = 0V VDS = VGS, ID = -250µA VDS = -30V, VGS = 0V VGS = ±25V, VDS = 0V VGS = -20V, ID = -12A Drain-Source ON Resistance RDS(ON) VGS = -10V, ID = -12A VGS = -5V, ID = -10A Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Note : 1. 2. Surface mounted FR-4 board by JEDEC (jesd51-7) Starting TJ=25°C, L=1mH, IAS= -13A VDD=-20V, VGS=-10V. Symbol Test Condition Min Typ Max Unit -30 -1.0 - -1.8 -3.0 -1 V 8.6 10 14.6 25.5 ±0.1 10 12.1 18.3 - µA mΩ gFS VDS = -5V, ID = -10A S Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VGS = -10V ,VDS = -15V, RL = 1.25Ω, RGEN = 3Ω VDS = -15V, VGS = 0V, f = 1.0MHz VDS = -15V, ID = -12A VGS = -10V - 30.5 5.2 7.0 1433 212 338 15.2 12.9 50.6 34.6 ns pF nC VSD trr Qrr IS = -1A, VGS = 0V IF = -12A, di/dt = 100A/µs - -0.73 38.5 35.9 -1.0 V ns - nC May. 2011 Version 1.1 2 MagnaChip Semiconductor Ltd. Free Datasheet http:/// MDS3604 [...]

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MDS3604 Datasheet


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