MDU1516 – Single N-channel Trench MOSFET

Part Number : MDU1516

Function : Single N-channel Trench MOSFET

Manufactures : MagnaChip

Images :

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MDU1516 image

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pinout

Description :

MDU1516 – Single N-Channel Trench MOSFET 30V MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ General Description The MDU1516 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1516 is suitable device for DC/DC Converter and general purpose applications. Features VDS = 30V ID = 47.6A @VGS = 10V RDS(ON) < 9.0 mΩ @VGS = 10V < 14.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PowerDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case May. 2011. Version 1.2 1 G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 30 ±20 47.6 38.0 18.6(3) 14.9(3) 100 35.7 22.8 5.5(3) 3.5(3) 53.0 -55~150 Unit V V A A W mJ oC Symbol RθJA RθJC Rating 22.7 3.5 Unit oC/W MagnaChip Semiconductor Ltd. MDU1516 – Single N-Channel Trench MOSFET 30V Ordering Information Part Number MDU1516URH Temp. Range -55~150oC Package PowerDFN56 Packing Tape & Reel Quantity 3000 units Rohs Status Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Symbol BVDSS VGS(th) IDSS IGSS Drain-Source ON Resistance RDS(ON) Forward Transconductance Dynamic Characteristics Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge gfs Qg(10V) Qg(4.5V) Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf Rg VSD trr Qrr Test Condition Min ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS = 10V, ID = 14A VGS = 4.5V, ID = 11A VDS = 5V, ID = 10A TJ=55oC TJ=125oC 30 1.3 - VDS = 15.0V, ID = 14A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 15.0V, ID = 14A , RG = 3.0Ω f=1 MHz 11.0 5.2 662 65 134 2.0 IS = 14A, VGS = 0V IF = 14A, dl/dt = 100A/µs - Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 18A, VDD = 27V, VGS = 10V 3. T < 10sec. Typ 1.9 7.8 11.3 11.7 31 14.6 6.9 3.0 2.6 882 86 178 10.3 10.6 23.0 7.4 3.0 0.8 19.5 11.0 Max 2.7 1 5 ±0.1 9.0 13.0 14.0 - 18.3 8.6 1103 108 223 4.5 1.1 29.3 16.5 Unit V µA mΩ S nC pF ns Ω V ns nC May. 2011. Version 1.2 2 MagnaChip Semiconductor Ltd. ID, Drain Current [A [...]

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MDU1516 Datasheet


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