MP1008-G – (MP1000-G – MP1010-G) Silicon Bridge Rectifiers

Part Number : MP1008-G

Function : (MP1000-G – MP1010-G) Silicon Bridge Rectifiers

Manufactures : Comchip Technology

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Description :

Silicon Bridge Rectifiers MP1000-G THRU MP1010-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 10 Amp Features: Diffused Junction High Current Capability High Case Dielectric Strength High Surge Current Capability Ideal for Printed Circuit Board Application Plastic Material has Underwriters Laboratory Flammability Classification 94V-0 MP-10 H J G + ~ A E ~ – Mechanical Data: Case: Molded Plastic Terminals: Plated Leads Solderable Per MIL STD-202, Method 208 Weight: 5.4 grams (approx.) Mounting position: Through Hole for #6 Screw D E Dim A B C D E C B Metal Heat Sink KBP Min. Max 14.73 15.75 5.80 6.90 19.00 1.00 O Typical 6.14 5.11 Hole for #6 screw G 3.60 4.00 J 10.30 11.30 2.38×45ºC Typical I All Dimensions in mm Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate currently by 20%. Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note1) @ TA = 50ºC MP MP MP MP KBP KBP KBP Symbol 1000-G 1001-G 1002-G 1004-G 1006-G 1008-G 1010-G UNIT VRRM VRWM VR VR(RMS) Io 35 70 140 280 10 420 560 700 V A 50 100 200 400 600 800 1000 V Non-Repetitive Peak Forward Surge Current 8.3ms Single IFSM Half-sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF=2.0A Peak Reverse Current @ TA=25ºC At Rated DC Blocking Voltage @ TA=100ºC Rating for Fusing (t<8.3ms) (Note2) Typical Thermal Resistance (Note4) Operating and Storage Temperature Range Typical Junction Capacitance (Note3) Note: 200 A VFM IRM I2t RθJA TJ, TSTG CJ 1.1 10 1.0 64 7.5 -55 to +160 110 V uA A2S K/W ºC pF 1. Non-repetitive for t>1ms and <8.3ms. 2. Thermal resistance junction to ambient mounted on PC board with 13.0 x 13.0 x 0.03 mm thick land areas. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. 4. Thermal resistance junction to case per element. “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 Silicon Bridge Rectifiers MP1000-G THRU MP1010-G (RoHS Device) Rating and Characteristic Curve (MP1000-G thru MP1010-G) 10 10 I AV, Average forward OUTPUT current ( A ) Resistive or Inductive load 8 I F , Forward current ( A ) 1.0 6 4 0.1 Tj = 25 o C Pulse width = 300uS 2 0 25 50 75 100 125 0.01 0 0.4 0.8 1.2 1.6 T A , Ambient Temperature ( o C) V F , Instantaneous Forward Voltage (V) 240 10 Tc = 50 o C Single half sine-wave JEDEC method 200 I R, Instantaneous Reverse Current ( A ) I F, Peak Forward Surge Current ( A ) Tj =100o C 160 1.0 120 80 0.1 40 Tj =25o C 0 1.0 10 100 0.01 0 40 80 120 Number of Cycles at 60Hz Percent of Rated Peak Reverse Voltage (%) “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptec [...]

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MP1008-G Datasheet


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