Part Number: NTP30N20
Function: 30A, 200V, N-channel Power MOSFET
Package: TO-220 Type
Manufacturer: ON Semiconductor
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Description:
NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature http://onsemi.com Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1) Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL(pk) = 20 A, L = 3.0 mH, RG = 25 Ω) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS 450 °C/W RθJC RθJA TL 0.7 62.5 260 °C Value 200 200 “30 “40 Adc 30 22 90 214 1.43 −55 to +175 W W/°C °C mJ 1 Unit Vdc Vdc Vdc 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V (Typ) N−Channel D G S MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 TO−220AB CASE 221A STYLE 5 NTP30N20 LLYWW 3 Source 2 Drain 1 Gate 2 3 1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%. NTP30N20 LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device NTP30N20 Package TO−220AB Shipping 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 1 December, 2003 − Rev. 4 Publication Order Number: NTP30N20/D DataSheet 4 U .com NTP30N20 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VGS = 0 Vdc, VDS = 200 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 200 Vdc, TJ = 175°C) Gate−Body Leakage Current (VGS = ± 30 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 15 Adc) (VGS = 10 Vdc, ID = 10 Adc) (VGS = 10 Vdc, ID = 15 Adc, TJ = 175°C) Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 30 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) (VDS = 160 Vdc, VGS = 0 Vdc, f = 1.0 MHz) (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss 2335 380 148 75 − − − − pF VGS(th) 2.0 − RDS(on) […]
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