P0903BDG Datasheet – N-Channel Enhancement Mode MOSFET

This post explains for the semiconductor P0903BDG.

The Part Number is P0903BDG.

The function of this semiconductor is N-Channel Enhancement Mode MOSFET.

Manufacturers : UNIKC

Preview images :

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P0903BDG image

Description :

P0903BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5mΩ @VGS = 10V ID 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 56 35 160 Avalanche Current IAS 34 Avalanche Energy L=0.1mH EAS 60 Power Dissipation TC= 25 °C TC= 100°C PD 49 20 Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.55 63 UNITS °C / W REV 1.0 1 2014/5/7 P0903BDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS […]

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P0903BDG Datasheet

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