P10N60 – SGP10N60

Part Number : P10N60

Function : SGP10N60

Manufactures : Infineon Technologies Corporation

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Description :

SGP10N60 SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: – Motor controls – Inverter • NPT-Technology for 600V applications offers: – very tight parameter distribution – high ruggedness, temperature stable behaviour – parallel switching capability G E Type SGP10N60 SGB10N60 SGW10N60 Maximum Ratings Parameter VCE 600V IC 10A VCE(sat) 2.2V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67041-A4710-A2 Q67041-A4710-A4 Q67040-S4234 Symbol VCE IC Value 600 21 10.9 Unit V A Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature 1) ICpul s VGE EAS 42 42 ±20 70 V mJ tSC Ptot Tj , Tstg 10 104 -55…+150 µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00 SGP10N60 SGB10N60, SGW10N60 Symbol Conditions Max. Value Unit Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB 1) RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB 1.2 62 40 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 10 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 3 Typ. 2 2.2 4 6.7 580 70 50 64 7 13 100 max. 2.4 2.7 5 Unit V µA 40 1500 100 696 84 60 83 A nC nH nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 10 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =1 0 A V G E = 15 V T O – 22 0A B T O – 24 7A C V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, T j ≤ 15 0 ° C Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 1) 2 2 Mar-00 SGP10N60 SGB10N60, SGW10N60 […]

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P10N60 Datasheet


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