P10N60C – FQP10N60C

Part Number : P10N60C

Function : FQP10N60C

Manufactures : Fairchild Semiconductor

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P10N60C image

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Description :

FQP10N60C / FQPF10N60C 600V N-Channel MOSFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET ® Features • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D GDS TO-220 FQP Series GD S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current – Continuous (TC = 25°C) – Continuous (TC = 100°C) – Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) – Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds – Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient G TO-220F FQPF Series S FQP10N60C FQPF10N60C 600 9.5 9.5 – 5.7 5.7 – 38 38 – ± 30 700 9.5 15.6 4.5 156 50 1.25 0.4 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/°C °C °C FQP10N60C 0.8 0.5 62.5 FQPF10N60C 2.5 -62.5 Units °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev. C 1 www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQP10N60C FQPF10N60C Device FQP10N60C FQPF10N60C Package TO-220 TO-220F Reel Size — Tape Width — Quantity 50 50 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 — —– On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4.75 A 2.0 — VDS = 40 V, ID = 4.75 A (Note 4) — Dynamic Characteristics […]

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P10N60C Datasheet


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