Part Number: P2NC60FP, STP2NC60FP
Function: 600V, 1.9A, PowerMesh MOSFET
Package: TO-220, TO-220FP Type
Manufacturer: ST Microelectronics
Images:
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Description
The PowerMESH is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
N-CHANNEL 600V – 7Ω – 1.9A – TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP2NC60 STP2NC60FP s s s s s STP2NC60 STP2NC60FP VDSS 600 V 600 V RDS(on) <8Ω <8Ω ID 1.9 A 1.9 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 3 1 2
Applications:
HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt VISO Tstg Tj . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –60 to 150 150 1.9 1.2 7.4 70 0.56 Value STP2NC60 600 600 ±30 1.9 (*) 1.2 (*) 7.4 (*) 30 0.24 3.5 2000 STP2NC60FP Unit V V V A A A W W/°C V/ns V °C °C (•)Pulse width limited by safe operating area (1)ISD ≤1.9A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX (*) Limited only by Maximum Temperature Allowed April 2001 1/9 STP2NC60/STP2NC60FP THERMAL DATA TO-220 Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.76 62.5 0.5 300 TO-220FP 4.125 […]
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