P62NS04Z – STP62NS04Z

Part Number : P62NS04Z

Function : STP62NS04Z

Manufactures : STMicroelectronics

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P62NS04Z image

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pinout

Description :

STP62NS04Z N-channel clamped 12.5mΩ – 62A – TO-220 Fully protected MESH OVERLAY™ Power MOSFET General features Type STP62NS04Z VDSS (@Tjmax) Clamped RDS(on) <0.015Ω ID 62A 100% avalanche tested Low capacitance and gate charge 175° C maximum junction temperature TO-220 1 2 3 Description This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. Internal schematic diagram Applications ■ Switching application Order codes Part number STP62NS04Z Marking P62NS04Z Package TO-220 Packaging Tube October 2006 Rev 5 1/12 www.st.com 12 Contents STP62NS04Z Contents 1 2 Electrical ratings . . 3 Electrical characteristics . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . 9 Revision history . 11 2/12 STP62NS04Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDG IGS IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain gate current (continuous) Gate sourcecurrent (continuous) Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value Clamped Clamped 62 37.5 ± 50 ± 50 248 110 0.74 8 500 8 -55 to 175 A W W/°C V/ns mJ V °C Unit V V A A PTOT (2) (3) dv/dt EAS Peak diode recovery voltage slope Single Pulse Avalanche Energy ESD (HBM - C = 100pF, R = 1.5 kΩ) Operating junction temperature Storage temperature VESD TJ Tstg 1. Pulse width limited by safe operating area 2. ISD ≤40A, di/dt ≤100A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX 3. Starting TJ = 25 oC, ID = 20A, VDD = 20V Table 2. Symbol RthJC RthJA Tl Thermal data Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 1.36 62.5 300 Unit °C/W °C/W °C 3/12 Electrical characteristics STP62NS04Z 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage c [...]

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P62NS04Z Datasheet


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