P65NF06 Datasheet – STP65NF06

Part Number : P65NF06

Function : STP65NF06

Manufactures : STMicroelectronics

Images :

1 page
P65NF06 image

2 page
pinout

Description :

STD65NF06 STP65NF06 N-channel 60V – 11.5mΩ – 60A – DPAK/TO-220 STripFET™ II Power MOSFET General features Type VDSS 60V 60V RDS(on) <14mΩ <14mΩ ID 60A 60A 3 1 1 2 3 STD65NF06 STP65NF06 ■ ■ Standard level gate drive 100% avalanche tested DPAK TO-220 Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number STD65NF06 STP65NF06 Marking D65NF06 P65NF06 Package DPAK TO-220 Packaging Tape & reel Tube July 2006 Rev 1 1/14 www.st.com 14 Contents STD65NF06 - STP65NF06 Contents 1 2 Electrical ratings 3 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 8 4 5 6 Package mechanical data . 9 Packing mechanical data 12 Revision history . . . 13 2/14 STD65NF06 - STP65NF06 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor Value 60 ± 20 60 42 240 110 0.73 10 390 -55 to 175 Max. operating junction temperature Unit V V A A A W W/°C V/ns mJ °C ID IDM (1) Ptot dv/dt (2) EAS (3) Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Tstg Tj 2. 1. Pulse width limited by safe operating area. ISD ≤60A, di/dt ≤ 300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX 3. Starting Tj = 25 °C, ID = 30A, VDD = 40V Table 2. Symbol Thermal data Parameter TO-220 1.36 62.5 -300 -50 -DPAK Unit °C/W °C/W °C/W °C/W Rthj-case Thermal resistance junction-case max Rthj-amb Rthj-pcb(1) Tl Thermal resistance junction-ambient max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose (for 10sec. 1.6mm from case) 1. When mounted on FR-4 of 1 inch², 2 oz Cu 3/14 Electrical characteristics STD65NF06 - STP65NF06 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage [...]

3 page
image

P65NF06 Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.