Part Number : P6NK60ZFP
Function : STP6NK60ZFP
Manufactures : STMicroelectronics
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Description :
STB6NK60Z – STB6NK60Z-1 STP6NK60ZFP – STP6NK60Z N-channel 600 V – 1 Ω – 6 A – TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET Features Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z ■ VDSS 600 V 600 V 600 V 600 V RDS(on) < 1.2 Ω < 1.2 Ω < 1.2 Ω < 1.2 Ω ID 6A 6A 6A 6A PW 110 W 110 W 30 W 110 W TO-220 1 2 3 3 1 D²PAK Extremely high dv/dt capability 100% avalanche tested Gate charge minimized I²PAK 3 12 3 1 2 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Table 1. Device summary Marking B6NK60Z B6NK60Z P6NK60ZFP P6NK60Z Package D²PAK I²PAK TO-220FP TO-220 Packaging Tape & reel Tube Tube Tube Order codes STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z November 2007 Rev 8 1/17 www.st.com 17 Contents STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Contents 1 2 Electrical ratings . . 3 Electrical characteristics . 4 2.1 Electrical characteristics (curves) .. 6 3 4 5 6 Test circuit .. 9 Package mechanical data 10 Packing mechanical data 15 Revision history . 16 2/17 STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) PTOT Absolute maximum ratings Value Parameter TO-220/D²/I²PAK TO-220FP Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor 6 3.8 24 110 0.88 3500 4.5 --55 to 150 2500 600 ± 30 6 (1) 3.8 (1) 24 (1) 30 0.24 V V A A A W W/°C V V/ns V °C Unit VESD(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ) dv/dt(3) VISO Tj Tstg Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 6 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Value Parameter TO-220/D²/I²PAK TO-220FP 1.14 62.5 300 4.2 Unit °C/W °C/W °C Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Tl Maximum lead temperatur [...]
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