Part Number: P6NK90ZFP, STP6NK90ZFP
Function: N-Channel 900V, 5.8A, Power MOSFET
Package: TO-220FP Type
Manufacturer: STMicroelectronics
Images:
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Features:
STP6NK90Z – STP6NK90ZFP STB6NK90Z N-CHANNEL 900V – 1.75Ω – 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z VDSS 900 V RDS(on) <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A Pw 140 W 30 W 140 W 3 1 2 TYPICAL RDS(on) = 1.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 3 1 TO-220FP D2PAK
Description:
The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM Applications HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s ORDERING INFORMATION SALES TYPE STP6NK90Z STP6NK90ZFP STB6NK90ZT4 MARKING P6NK90Z P6NK90ZFP B6NK90Z PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL November 2002 1/12 STP6NK90Z – STP6NK90ZFP – STB6NK90Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Viso Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature –55 to 150 5.8 3.65 23.2 140 1.12 4000 4.5 2500 Value STP6NK90Z / STB6NK90Z STP6NK90ZFP Unit V V V 5.8 (*) 3.65 (*) 23.2 (*) 30 0.24 A A A W W/°C V V/ns V °C 900 900 ± 30 ( ) Pulse width limited by safe operating area (1) ISD ≤5.8A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (When mounted on minimum Footprint) D2PAK 0.89 60 62.5 300 TO-220FP 4.2 Unit °C/W °C/W °C/W °C Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 5.8 300 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION Features OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb pos […]
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