P75NF75 – STP75NF75

Part Number : P75NF75

Function : STP75NF75

Manufactures : STMicroelectronics

Images :

1 page
P75NF75 image

2 page
pinout

Description :

STB75NF75 STP75NF75 – STP75NF75FP N-channel 75V – 0.0095Ω – 80A – TO-220 – TO-220FP – D2PAK STripFET™ II Power MOSFET General features Type STB75NF75 STP75NF75 STP75NF75FP VDSS 75V 75V 75V RDS(on) <0.011Ω <0.011Ω <0.011Ω ID 80A(1) 80A(1) 80A(1) TO-220 3 1 2 1 3 2 TO-220FP 1. Current limited by package ■ ■ Exceptional dv/dt capability 100% avalanche tested 3 1 Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. D²PAK Internal schematic diagram ■ Applications Switching application Order codes Part number STB75NF75T4 STP75NF75 STP75NF75FP Marking B75NF75 P75NF75 P75NF75 Package D²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube February 2007 Rev 8 1/16 www.st.com 16 Contents STB75NF75 - STP75NF75 - STP75NF75FP Contents 1 2 Electrical ratings . . 3 Electrical characteristics . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data 10 Packaging mechanical data . 14 Revision history . 15 2/16 STB75NF75 - STP75NF75 - STP75NF75FP Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID (1) Absolute maximum ratings Value Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 80 70 320 300 2.0 12 700 --55 to 175 2000 D2PAK /TO-220 75 75 ± 20 80 70 320 45 0.3 Unit TO-220FP V V V A A A W W/°C V/ns mJ V °C ID(1) IDM(2) PTOT (3) dv/dt Peak diode recovery voltage slope Single pulse avalanche energy Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Operating junction temperature Storage temperature EAS (4) VISO TJ Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤80A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX 4. Starting TJ = 25 oC, ID = 40A, VDD = 37.5V Table 2. Symbol RthJC RthJA Tl Thermal data Value Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering pu [...]

3 page
image

P75NF75 Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.