P9NK60ZFP – STP9NK60ZFP

Part Number : P9NK60ZFP

Function : STP9NK60ZFP

Manufactures : STMicroelectronics

Images :

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P9NK60ZFP image

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Description :

N-CHANNEL 600V – 0.85Ω – 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 VDSS 600 600 600 600 V V V V RDS(on) < 0.95 < 0.95 < 0.95 < 0.95 ID 7 7 7 7 A A A A Pw 125 W 30 W 125 W 125 W 1 2 STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 Ω Ω Ω Ω 3 s s s s s s s TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 I2PAK 3 12 1 D2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60ZT4 STB9NK60Z-1 MARKING P9NK60Z P9NK60ZFP B9NK60Z B9NK60Z B9NK60Z-1 PACKAGE TO-220 TO-220FP D2PAK D2PAK I2PAK PACKAGING TUBE TUBE TUBE TAPE & REEL TUBE June 2002 1/13 STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO-220 / D2PAK / I 2PAK Value TO-220FP Unit VDS VDGR VGS ID ID IDM (l) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 7 4.4 28 125 1 600 600 ± 30 7 (*) 4.4 (*) 28 (*) 30 0.24 4000 4.5 2500 -55 to 150 -55 to 150 V V V A A A W W/°C V V/ns V °C °C (l) Pulse width limited by safe operating area (1) I SD ≤7A, di/dt ≤200 µ A, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 I2PAK Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (When mounted on minimum Footprint) D2PAK 1 30 62.5 300 TO220FP 4.16 °C/W °C/W °C/W °C Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 7 235 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTIO [...]

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P9NK60ZFP Datasheet


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