PF610BL Datasheet – N-Channel Enhancement Mode MOSFET

This post explains for the semiconductor PF610BL.

The Part Number is PF610BL.

The function of this semiconductor is N-Channel Enhancement Mode MOSFET.

Manufacturers : UNIKC

Preview images :

1 page
PF610BL image

Description :

PF610BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V ID 0.9A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 0.9 0.5 5.4 Avalanche Current IAS 3.8 Avalanche Energy L = 1mH EAS 7.2 Power Dissipation TA = 25 °C TA = 70 °C PD 1.3 0.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 95 °C / W Ver 1.0 1 2012/7/4 PF610BL N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 100 Gat […]

2 page

PF610BL Datasheet

This entry was posted in Uncategorized. Bookmark the permalink.