QM3004M3 – N-Ch 30V Fast Switching MOSFETs

Part Number : QM3004M3

Function : N-Ch 30V Fast Switching MOSFETs

Manufactures : UBIQ

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QM3004M3 image

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pinout

Description :

QM3004M3 General Description The QM3004M3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3004M3 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings N-Ch 30V Fast Switching MOSFETs Product Summery BVDSS 30V RDSON 9mΩ ID 46A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch PRPAK3X3 Pin Configuration D S SSG Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 10s Steady State 30 ±20 46 29 17.3 11 14 9 92 130 34 29 4.2 1.67 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 1 Typ. ——- Max. 75 30 4.32 Unit ℃/W ℃/W ℃/W Rev A.01 D071311 QM3004M3 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=30A VGS=4.5V , ID=15A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=30A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=15A VDD=15V , VGS=10V , RG=3.3Ω ID=15A VDS=15V , VGS=0V , f=1MHz Min. 30 ——1.2 ——————————— Typ. — 0.027 7.5 11 1.5 -5.8 ——38 1.7 12.6 4.2 5.1 4.6 12.2 26.6 8 1317 163 131 Max. —-9 15 1.9 –1 5 ±100 –2.9 17.6 5.9 7.1 9.2 22 53 16 1844 228 183 Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avala […]

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QM3004M3 Datasheet


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