QM3016D – N-Ch 30V Fast Switching MOSFETs

Part Number : QM3016D

Function : N-Ch 30V Fast Switching MOSFETs

Manufactures : UBIQ

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QM3016D image

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Description :

QM3016D N-Ch 30V Fast Switching MOSFETs General Description The QM3016D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3016D meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V Applications RDSON 4mΩ ID 96A z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch TO252 Pin Configuration D Absolute Maximum Ratings S G Rating Parameter Drain-Source Voltage Gate-Source Voltage 10s Steady State 30 ±20 1 1 1 1 Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Units V V A A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Avalanche Current Total Power Dissipation Total Power Dissipation 4 4 2 3 96 68 30 25 192 317 53.8 62.5 6 -55 to 175 -55 to 175 2.42 19 16 A A A mJ A W W ℃ ℃ Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case 1 Typ. ——- Max. 62 25 2.4 Unit ℃/W ℃/W ℃/W Rev A.01 D021011 1 QM3016D N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=30A VGS=4.5V , ID=15A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=30A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=15A Min. 30 ——1.0 –VDD=15V , VGS=10V , RG=3.3Ω ID=15A —-VDS=15V , VGS=0V , f=1MHz —-Typ. –0.0213 3.4 5.2 1.5 -5.73 ——26.5 1.4 31.6 8.6 11.7 9 19 58 15.2 3075 400 315 Max. —-4 6 2.5 –1 5 ±100 –2.8 —4000 530 –pF ns nC Unit V V/℃ mΩ V mV/℃ uA nA S Ω △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) IDSS IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy 5 Conditions V […]

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QM3016D Datasheet


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