QM3024M6 – N-Ch 30V Fast Switching MOSFETs

Part Number : QM3024M6

Function : N-Ch 30V Fast Switching MOSFETs

Manufactures : UBIQ

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Description :

General Description The QM3024M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3024M6 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available QM3024M6 N-Ch 30V Fast Switching MOSFETs Product Summery BVDSS 30V RDSON 9 mΩ ID 57A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch PRPAK5X6 Pin Configuration D Absolute Maximum Ratings S SSG Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 30 ±20 57 36 12 9.6 130 130 34 46 2 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Typ. —– Max. 62 2.7 Unit ℃/W ℃/W Rev A.02 D033011 1 QM3024M6 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=30A VGS=4.5V , ID=15A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=30A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=15A VDD=15V , VGS=10V , RG=3.3Ω ID=15A VDS=15V , VGS=0V , f=1MHz Min. 30 ——1.2 ——————————— Typ. 35 0.024 7.2 10.5 1.5 -3.5 ——42 1.45 10.6 4.2 4.0 6.4 70.6 22.4 8.0 1127 194 77 Max. —-9 13.5 2.5 –1 5 ±100 –2.4 14.8 5.9 5.6 12.8 127 45 16 1578 272 108 Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy5 Conditions VDD=25V , L=0.1mH , IAS=20A Min. 45 Typ. — Max. — Unit […]

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QM3024M6 Datasheet


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