RF2001NS3D – Fast Recovery Diodes

Part Number : RF2001NS3D

Function : Fast Recovery Diodes

Manufactures : Rohm

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Description :

Super Fast Recovery Diode RF2001NS3D Series Standard Fast Recovery Dimensions (Unit : mm) Applications General rectification RF2001 NS3D ① Data Sheet Land size figure (Unit : mm) Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common dual type Construction Silicon epitaxial planer Structure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day Taping dimensions (Unit : mm) ①②③ Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave resistive load , Tc=90°C 1/2 Io per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Limits 350 300 20 100 150 55 to 150 Unit V V A A C C Electrical characteristics (Tj=25C, per diode) Parameter Symbol Conditions Forward voltage Reverse current Reverse recovery time VF IF=10A IR VR=300V trr IF=0.5A,IR=1A,Irr=0.25×IR Thermal resistance Rth(j-c) junction to case Min. - - - - Typ. Max. 1.2 1.3 0.03 10 17 25 -2 Unit V μA ns °C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 – Rev.A RF2001NS3D   Data Sheet FORWARD CURRENT:IF(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 Tj=125°C Tj=150°C 1 Tj=25°C Tj=75°C 0.1 0 per diode 500 1000 1500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 2000 1000 f=1MHz per diode 100 10 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 100 VR=300V Tj=25°C per diode AVE:46.7nA 10 1 IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 100000 10000 1000 Tj=150°C Tj=125°C 100 10 1 0 Tj=75°C Tj=25°C per diode 50 100 150 200 250 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 300 1300 1250 1200 1150 1100 1050 1000 IF=10A Tj=25°C per diode AVE:1163mV VF DISPERSION MAP 240 f=1MHz VR=0V Tj=25°C per diode 220 200 AVE:207.8pF 180 Ct DISPERSION MAP REVERSE CURRENT:IR(nA) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 – Rev.A RF2001NS3D   Data Sheet ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 300 250 200 150 100 50 0 1000 1cyc IFSM 8.3ms AVE:167.5A IFSM DISPERSION MAP 100 10 IFSM 8.3ms 8.3ms 1cyc 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 30 AVE:29.8kV No break at 30kV 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 30 25 20 15 10 5 0 1000 100 IF=0.5A IR=1A Irr=0.25×IR Tj=25°C per diode AVE:16.9ns trr DISPERSION MAP IFSM t 10 1 10 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Rth(j-c) 1 0.1 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 EL […]

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RF2001NS3D Datasheet


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