Part Number : RJH60F7ADPK
Function : Silicon N Channel IGBT
Manufactures : Renesas Technology
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Description :
RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode Preliminary REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC θj-c θj-c Tj Tstg Ratings 600 ±30 90 50 180 100 328.9 0.38 2.0 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 1 of 6 RJH60F7ADPK Preliminary Electrical Characteristics Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 trr Min 4 Typ 1.6 4890 198 83 48 36 122 95 1.6 140 Max 100 ±1 8 1.75 2.1 Unit μA μA V V V pF pF ns ns ns ns V ns (Tj = 25°C) Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 50 A, VGE = 15V Note3 IC = 90 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300 V VGE = 15 V Note3 Rg = 5 Ω IF = 20 A Note3 C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test IF = 20 A diF/dt = 100 A/μs REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 2 of 6 RJH60F7ADPK Preliminary Main Characteristics Maximum Safe Operation Area 1000 160 Typical Output Characteristics Pulse Test Ta = 25°C 8.6 V 10 V 120 15 V 7.6 V 9V 8V 8.4 V Collector Current IC (A) 100 10 PW = 10 μs 10 Collector Current IC (A) 0μ s 80 1 Tc = 25°C Single pulse 10 100 1000 40 VGE = 7 V 0 0 1 2 3 4 5 0.1 1 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage VCE(sat) (V) Pulse VCE = Test 10 V Ta = 25 °C Pulse Test Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 3.0 2.5 2.0 1.5 1.0 IC = 20 A 0.5 0 0 4 8 12 16 20 50 A 90 A Pulse Test Ta = 25°C 160 Collector Current IC (A) 120 80 Tc = 75°C 40 25°C 0 0 2 4 6 8 10 –25°C Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Collector to Emitter […]
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