This post explains for the IGBT.
The Part Number is RJP30H2A, RJP30H2DPK-M0.
The package is TO263-3L, D2PAK, TO-3P
The function of this semiconductor is Silicon N Channel IGBT.
Preview images :
This is 360V, 35A, Silicon N Channel IGBT.
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES = 1 μA max
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 360 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 35 A
4. Collector dissipation : Pc = 60 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
1. High speed power switching