This post explains for the IGBT RJP30H2A.
The Part Number is RJP30H2A.
The package is TO263-3L, D2PAK, TO-3P
The function of this semiconductor is Silicon N Channel IGBT.
Manufacturers : Renesas
Preview images :
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Description :
Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) 4 C 1 23 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) E Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25C Symbol VCES VGES Ic ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 360 ±30 35 250 60 2.08 150 –55 to +150 (Ta = 25°C) Unit V V A A W °C/ W °C °C R07DS0467EJ0200 Rev.2.00 Jun […]
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