RJP30H2A Datasheet – 360V, N Ch, IGBT – Renesas

This post explains for the semiconductor RJP30H2A.

The Part Number is RJP30H2A.

The function of this semiconductor is Silicon N Channel IGBT.

Manufacturers : Renesas

Preview images :

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RJP30H2A image

Description :

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ  High speed switching: tf = 100 ns typ, tf = 180 ns typ  Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) 4 C 1 23 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) E Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tc = 25C www.DataSheet.co.kr Symbol VCES VGES Ic ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 360 ±30 35 250 60 2.08 150 –55 to +150 (Ta = 25°C) Unit V V A A W °C/ W °C °C R07DS0467EJ0200 Rev.2.00 Jun […]

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RJP30H2A Datasheet


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