RJP6065DPM – N-Channel IGBT

Part Number : RJP6065DPM

Function : N-Channel IGBT

Manufactures : Renesas

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RJP6065DPM image

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Description :

Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Collector 3. Emitter E 1 2 3 www.DataSheet.co.kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area Symbol VCES VGES Ic Note1 ic(peak) Note1 PC j-c Tj Tstg Ratings 630 ±30 40 100 50 2.5 150 –55 to +150 Unit V V A A W °C/W °C °C R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Page 1 of 7 Datasheet pdf – http://www.DataSheet4U.net/ RJP6065DPM Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min 3 — Typ — 1.8 1.5 1130 95 10 40 90 80 450 Max 1 ±100 5.5 2.3 Unit A nA V V V pF pF pF ns ns ns ns Test Conditions VCE = 630 V, VGE = 0 VGE = ± 30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 40 A, VGE = 15 V Note2 IC = 20 A, VGE = 15 V Note2 VCE = 25 V VGE = 0 f = 1 MHz IC = 40 A, Resistive Load RL = 7.5  VGE = 15 V Rg = 5  Notes: 2. Pulse test www.DataSheet.co.kr R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Page 2 of 7 Datasheet pdf – http://www.DataSheet4U.net/ RJP6065DPM Preliminary Main Characteristics Collector Dissipation vs. Case Temperature 60 60 Maximum DC Collector Current vs. Case Temperature Collector Dissipation Pc (W) 40 30 20 10 0 0 25 50 75 100 125 150 175 Collector Current IC (A) 50 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area 1000 100 PW 10 0μ Typical Output Characteristics Pulse Test Ta = 25°C 80 9V 10 V 60 15 V 8V 7.5 V 7V 6.5 V VGE = 6 V 0 8.5 V Collector Current IC (A) 100 = 10 10 μs 1 Collector Current IC (A) s www.DataSheet.co.kr 40 0.1 Tc = 25°C Single pulse 1 10 100 1000 20 0.01 0.1 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 100 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) 10 Pulse Test Ta = 25°C 8 IC = 20 A 40 A 4 60 A Collector Current IC (A) VCE = 10 V Pulse Test 80 60 Tc = 125°C 40 75°C […]

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RJP6065DPM Datasheet


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