RJP63F3DPP-M0 – N-Channel IGBT

Part Number : RJP63F3DPP-M0

Function : N-Channel IGBT

Manufactures : Renesas

Images :

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Description :

Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tc = 25°C Symbol VCES VGES IC ic(peak) Note1 PC Note2 θj-c Tj Tstg Ratings 630 ±30 40 200 30 4.17 150 –55 to +150 Unit V V A A W °C/ W °C °C R07DS0321EJ0200 Rev.2.00 May 26, 2011 Page 1 of 6 Datasheet pdf – http://www.DataSheet4U.net/ RJP63F3DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Min 2.5 Typ 1.7 1250 48 22 36 7 10 0.02 0.07 0.05 0.1 Max 1 ±100 5 2.2 Unit μA nA V V pF pF pF nC nC nC μs μs μs μs Test Conditions VCE = 630 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 40 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 40 A IC = 40 A RL = 7.5 Ω VGE = 15 V Rg = 5 Ω Notes: 3. Pulse test. www.DataSheet.co.kr R07DS0321EJ0200 Rev.2.00 May 26, 2011 Page 2 of 6 Datasheet pdf – http://www.DataSheet4U.net/ RJP63F3DPP-M0 Preliminary Main Characteristics Maximum Safe Operation Area 1000 100 10 PW Typical Output Characteristics (1) Pulse Test Ta = 25°C 7.5 V 8V 60 10 V 15 V 40 5.5 V 6V 7V 6.5 V Collector Current IC (A) 100 = μs Collector Current IC (A) 80 10 0 10 μs 1 0.1 Ta = 25°C 1 shot pulse 1 10 100 1000 20 0 0 1 2 3 VGE = 5 V 0.01 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) 200 Pulse Test Ta = 25°C 10 V 12 V 120 15 V 9V 8.5 V 100 Typical Transfer Characteristics VCE = 10 V Pulse Test 80 Collector Current IC (A) 160 7.5 V 7V 6.5 V Collector Current IC (A) 8V 60 80 6V www.DataSheet.co.kr 40 Tc = 125°C 75°C 25°C 5.5 V 40 0 0 2 4 6 8 10 VGE = 5 V 20 0 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector […]

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RJP63F3DPP-M0 Datasheet


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