S34ML01G100TF100 – 3V SLC NAND Flash

Part Number : S34ML01G100TF100

Function : 3V SLC NAND Flash

Manufactures : Cypress Semiconductor

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S34ML01G100TF100 image

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Description :

Distinctive Characteristics  Density – 1 Gb/ 2 Gb / 4 Gb  Architecture – Input / Output Bus Width: 8-bits / 16-bits – Page size: – x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area – x16 = 1056 (1024 + 32) words; 32 words is spare area – Block size: 64 Pages – x8 = 128 KB + 4 KB – x16 = 64k + 2k words – Plane size: – 1 Gb / 2 Gb: 1024 Blocks per Plane x8 = 128 MB + 4 MB x16 = 64M + 2M words – 4 Gb: 2048 Blocks per Plane x8 = 256 MB+ 8 MB x16 = 128M + 4M words – Device size: – 1 Gb: 1 Plane per Device or 128 MB – 2 Gb: 2 Planes per Device or 256 MB – 4 Gb: 2 Planes per Device or 512 MB Performance  Page Read / Program – Random access: 25 µs (Max) – Sequential access: 25 ns (Min) – Program time / Multiplane Program time: 200 µs (Typ)  Block Erase (S34ML01G100TF100) – Block Erase time: 2.0 ms (Typ)  Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1) – Block Erase time: 3.5 ms (Typ) S34ML01G100TF100 S34ML02G1, S34ML04G1 1 Gb, 2 Gb, 4 Gb, 3 V […]

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S34ML01G100TF100 Datasheet



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