SMK0825D – Advanced N-Ch Power MOSFET

Part Number : SMK0825D

Function : Advanced N-Ch Power MOSFET

Manufactures : KODENSHI KOREA

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Description :

SMK0825D Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  High voltage: BVDSS=250V (Min.)  Low gate charge: Qg=14.5nC (Typ.)  Low drain-source On resistance: RDS(on)=0.43Ω (Max.)  RoHS compliant device  Halogen free package D Ordering Information Part Number SMK0825D Marking SMK0825 Package TO-252 G S TO-252 Marking Information SMK 0825 YWW□ Column 1, 2: Device Code Column 3: Production Information e.g.) YWW□ -. YWW: Date Code (year, week) -. □: Factory Code (‘A’: AUK, ‘S’: SP Semi.) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Repetitive Avalanche Voltage (Note 1, 2) Gate-source voltage Drain current (DC) – Drain current (Pulsed) – Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy Power dissipation Junction temperature Storage temperature range – Limited only maximum junction temperature (Note 1) Symbol VDSS VDS(Avalanche) VGSS ID Tc=25C Tc=100C IDM EAS IAR EAR PD TJ Tstg Rating 250 300 30 8 5.2 32 356 8 7.4 48 150 -55~150 Unit V V V A A A mJ A mJ W C C Rev. date: 12-AUG-11 KSD-T6O031-001 www.auk.co.kr 1 of 8 SMK0825D Thermal Characteristics Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth(j-c) Rth(j-a) Rating Max. 2.6 Max. 50 Unit C/W Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Internal gate resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time (Note 3,4) Rise time (Note 3,4) (Note 3,4) (Note 3) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) RG gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250uA, VGS=0 ID=250uA, VDS=VGS VDS=250V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=4A f=1MHz, VDS=0V VDS=10V, ID=4A VDS=25V, VGS=0V, f=1MHz Min. 250 2 11 Typ. 0.35 4 7 619 141 33 15 85 90 65 14.5 4 4.5 Max. 4 1 100 0.43 10 773 176 41 35 115 135 98 18.2 – Unit V V uA nA   S pF Turn-off delay time Fall time (Note 3,4) VDD=125V, ID=8A RG=25Ω 32 62 41 – ns Total gate charge (Note 3,4) Gate-source charge (Note 3,4) Gate-drain charge (Note 3,4) VDS=200V, VGS=10V ID=8A – nC Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time (Note 3,4) (Note 3,4) Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=8A IS=8A, VGS=0V dIF/dt=100A/us Min. – Typ. 178 1.16 Max. 8 32 1.4 – Unit A A V ns uC Reverse recovery charge Note: 1. Repeated rating: Pulse width limited by maximum junction temperature 2. L=8.9mH, IAS=8A, VDD=50V, RG=25, Starting TJ=25C 3. Pulse test: Pulse width≤300us, Duty cycle≤2 […]

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SMK0825D Datasheet


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