SS8050D331 – Plastic-Encapsulate Transistors

Part Number : SS8050D331

Function : Plastic-Encapsulate Transistors

Manufactures : YS

Images :

1 page
SS8050D331 image

2 page

Description :

DATA SHEET SEMICONDUCTOR TO-92 Plastic-Encapsulate Transistors Features Power dissipation PCM : 1 W :2W (TA=25℃) (TC=25℃) SS8050D331 TRANSISTOR (NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS- TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous TJ, Tstg Junction and Storage Temperature Value 40 25 5 1500 -55-150 123 Units V V V mA ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT Ic=100uA, IE=0 Ic=0.1mA, IB=0 IE=100µA, IC=0 VCB=40V, IE=0 VCE=20V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=10V, IC=50mA,f=30MHZ 40 25 5 85 40 100 V V V 0.1 µA 0.1 µA 0.1 µA 400 0.5 V 1.2 V 1V MHz CLASSIFICATION OF hFE(2) Rank B C DE Range 85-160 120-200 160-300 300-400 1 REV.02 20120705 DEVICE CHARACTERISTICS SS8050D331 2 REV.02 20120705 […]

3 page

SS8050D331 Datasheet

This entry was posted in Uncategorized. Bookmark the permalink.