STPS20L120C – Low drop power Schottky rectifier

Part Number : STPS20L120C

Function : Low drop power Schottky rectifier

Manufactures : ST Microelectronics

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Description :

STPS20L120C Power Schottky rectifier Features High junction temperature capability Avalanche capability specified Low forward voltage drop current A2 A1 K High frequency operation Insulated package – TO-220FPAB Insulating voltage = 1500 V rms Typical package capacitance 12 pF K Description Dual center tap Schottky rectifier suited for high frequency switch mode power supplies. Packaged in TO-220AB and TO-220FPAB, this device provides the adaptor designers with an optimized price-performance ratio. A1 K A2 A1 A2 K TO-220AB STPS20L120CT TO-220FPAB STPS20L120CFP Table 1. Device summary IF(AV) VRRM Tj(max) VF(typ) 2 x 10 A 120 V 150 °C 0.55 V May 2009 Doc ID 15670 Rev 1 1/8 www.st.com 8 Characteristics STPS20L120C 1 Characteristics Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj 1. dPtot-dTj Absolute ratings (limiting values, per diode) Parameter Repetitive peak reverse voltage Forward rms current Average forward current, δ = 0.5 Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature(1) Total package tp = 10 ms Sinusoidal tp = 1 µs Tj = 25 °C Value 120 20 20 200 8000 -65 to + 175 150 Unit V A A A W °C °C 1 – condition to avoid thermal runaway for a diode on its own heatsink Rth ( j – a ) Table 3. Symbol Thermal parameters Parameter TO-220AB Per diode Total Per diode Total Total TO-220FPAB 3.2 Value 2 1.1 4.9 4.1 0.2 °C/W Unit Rth(j-c) Junction to case TO-220FPAB TO-220AB Rth(c) Coupling When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 4. Symbol IR(1) Static electrical characteristics (per diode) Test conditions Reverse leakage current Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM Min. IF = 5 A IF = 10 A IF = 20 A Typ. 8 0.55 0.63 0.72 Max. 120 25 0.74 0.605 0.86 V 0.69 1 0.785 Unit µA mA VF(2) Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C 1. Pulse test : tp = 5 ms, δ < 2% 2. Pulse test : tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.595 x IF(AV) + 0.0095 IF2(RMS) 2/8 Doc ID 15670 Rev 1 STPS20L120C Characteristics Figure 1. Average forward power dissipation Figure 2. vs. average forward current (per diode) 12 δ=0.2 δ=0.1 δ=0.5 δ=1 Average forward current vs. ambient temperature (δ = 0.5, per diode) 9 8 7 6 5 PF(AV)(W) IF(AV)(A) Rth(j-a)=Rth(j-c) 10 δ=0.05 8 TO-220AB 6 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 T Rth(j-a)=15°C/W TO-220FP 4 T 2 IF(AV)(A) δ=tp/T tp δ=tp/T 0 0 25 tp Tamb(°C) 50 75 100 125 150 Figure 3. Normalized avalanche power derating vs. pulse duration Figure 4. Normalized avalanche power derating vs. junction temperature PARM(tp) PARM(1µs) 1 1.2 1 0.1 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 PARM [...]

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STPS20L120C Datasheet


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