STPS30170C – High Voltage Power Schottky Rectifier

Part Number : STPS30170C

Function : High Voltage Power Schottky Rectifier

Manufactures : ST Microelectronics

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Description :

® STPS30170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) 2 x 15 A 170 V 175 °C 0.75 V A1 K A2 VRRM Tj VF(max) A2 A2 A1 K FEATURES AND BENEFITS K A1 High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Insulated package: TO-220FPAB Insulating voltage: 2000 V DC Capacitance: 45 pF Avalanche specification TO-247 STPS30170CW TO-220AB STPS30170CT K A2 K A1 A1 A2 DESCRIPTION Dual center tab Schottky rectifier suited for High Frequency Switch Mode Power Supply. TO-220FPAB STPS30170CFP D2PAK STPS30170CG Table 2: Order Codes Part Numbers STPS30170CW STPS30170CT STPS30170CFP STPS30170CG STPS30170CG-TR Marking STPS30170CW STPS30170CT STPS30170CFP STPS30170CG STPS30170CG September 2005 REV. 1 1/9 STPS30170C Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IF(RMS) RMS forward current TO-220FPAB IF(AV) Average forward current TO-220AB / δ = 0.5 D2PAK TO-247 IFSM PARM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature – Critical rate of rise of reverse voltage Tc = 120 °C Tc = 155 °C Per device tp = 10ms sinusoidal tp = 1µs Tj = 25 °C 30 220 10500 -65 to + 175 175 10000 A W °C °C V/µs Per diode 15 A Parameter Repetitive peak reverse voltage Value 170 30 Unit V A 1 dPtot – thermal runaway condition for a diode on its own heatsink – : ————— > ————————Rth ( j – a ) dTj Table 4: Thermal Parameters Symbol Parameter TO-220FPAB Rth(j-c) Junction to case TO-220AB / D2PAK TO-247 TO-220FPAB Rth(c) TO-220AB / TO-247 When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Value Per diode Total Per diode Total Per diode Total Coupling Coupling Coupling 4 3.3 1.6 0.85 1.5 0.8 2.6 0.3 0.3 Unit °C/W D2PAK °C/W Table 5: Static Electrical Characteristics (per diode) Symbol IR – Parameter Reverse leakage current Tests conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF *- Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C Pulse test: – tp = 5 ms, δ < 2% *- tp = 380 µs, δ < 2% Min. Typ 5 Max. 20 20 0.92 Unit µA mA VR = VRRM IF = 15 A IF = 30 A 0.69 0.75 1 V 0.80 0.86 To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.0073 IF (RMS) 2 2/9 STPS30170C Figure 1: Average forward power dissipation versus average forward current (per diode) PF(AV)(W) 14 d=0.1 d=0.2 d=0.5 d=1 Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode) IF(AV)(A) 18 16 14 12 10 8 6 Rth(j-A)=15 °C/W Rth(j-a)=Rth(j-c) (TO-220FPAB) Rth(j-a)=Rth(j-c) (TO-220AB, TO -247 & D²PAK) 12 10 8 6 4 2 d=0.05 T 4 IF(AV)(A) T d=tp/T tp 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 2 0 0 d=tp/T 25 [...]

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STPS30170C Datasheet


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