STPS30170DJF – Power Schottky rectifier

Part Number : STPS30170DJF

Function : Power Schottky rectifier

Manufactures : STMicroelectronics

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Description :

STPS30170DJF Power Schottky rectifier Features Very small conduction losses Negligible switching losses Extremely fast switching Low thermal resistance Avalanche capability specified ECOPACK®2 compliant component K A K A K Description This Schottky rectifier is designed for switch mode power supply and high frequency DC to DC converters. Packaged in PowerFLAT™, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. Its low profile was especially designed to be used in applications with space-saving constraints. A PowerFLAT 5×6 STPS30170DJF A Table 1. Device summary Symbol IF(AV) VRRM Tj (max) VF(typ) Value 30 A 170 V 150 °C 0.65 V TM: PowerFLAT is a trademark of STMicroelectronics May 2011 Doc ID 16749 Rev 3 1/7 www.st.com 7 Free Datasheet http:/// Characteristics STPS30170DJF 1 Characteristics Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj 1. Absolute ratings (limiting values, anode terminals short circuited) Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature (1) Tc = 80 °C, δ = 0.5 tp = 10 ms sinusoidal Tc = 25 °C tp = 1 µs, Tj = 25 °C Value 170 45 30 200 12500 -65 to + 175 150 Unit V A A A W °C °C 1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Symbol Rth(j-c) Thermal resistance Parameter Junction to case Value 2.5 Unit °C/W Table 4. Symbol IR(1) Static electrical characteristics (anode terminals short circuited) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VR = VRRM Min. IF = 15 A IF = 30 A Typ. 4 0.65 0.71 Max. 15 12 0.88 0.70 V 0.95 0.79 Unit µA mA VF(2) Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.0046 IF2(RMS) 2/7 Doc ID 16749 Rev 3 STPS30170DJF Characteristics Figure 1. Average forward power dissipation Figure 2. versus average forward current 35 δ = 0.5 Average forward current versus ambient temperature (δ = 0.5) 32 28 24 20 16 12 8 4 0 PF(AV)(W) δ=1 IF(AV)(A) Rth(j-a) = Rth(j-c) 30 25 20 T δ = 0.2 δ = 0.1 δ = 0.05 15 δ = tp / T tp 10 T 5 IF(AV)(A) 0 0 5 10 15 20 25 30 35 40 0 δ = tp / T tp 25 50 75 100 Tamb(°C) 125 150 Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature PARM(tp) PARM(1 µs) 1 1.2 1 PARM(Tj) PARM(25 °C) 0.1 0.8 0.6 0.4 0.2 0.01 0.001 0.01 0.1 1 tp(µs) 10 100 1000 Tj(°C) 0 25 50 75 100 125 150 Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values) Figure 6. Relative [...]

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STPS30170DJF Datasheet


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