Part Number : SVF2N60F

Function : 600V N-CHANNEL MOSFET

Manufactures : SL

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Description :

SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cell TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVF2N60M SVF2N60F SVF2N60T SVF2N60D SVF2N60DTR Package Type TO-251-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVF2N60M SVF2N60F SVF2N60T SVF2N60D SVF2N60D Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http:// REV:1.1 2010.10.21 Page 1 of 10 SVF2N60M/F/T/D_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 34 0.27 Rating SVF2N60M/D SVF2N60T 600 ±30 2.0 8 44 0.35 115 -55~+150 -55~+150 23 0.18 SVF2N60F Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVF2N60M/D 3.7 110 SVF2N60T 2.86 62.5 SVF2N60F 5.56 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd (Note 2,3) VDS=480V,ID=2.0A, VGS=10V (Note 2,3) Test conditions VGS=0V, ID=250µA VDS=600V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA VGS=10V, ID=1.0A VDS=25V,VGS=0V, f=1.0MHZ VDD=300V,ID=2.0A, RG=25Ω Min. 600 2.0 Typ.3.7 250.1 35.7 1.1 9.2 23.4 15.3 20.1 5.67 1.74 1.99 Max. -1.0 ±100 4.0 4.2 nC ns pF Unit V µA nA V Ω HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http:// REV:1.1 2010.10.21 Page 2 of 10 SVF2N60M/F/T/D_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IS ISM VSD Trr Qrr Test con […]

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SVF2N60F Datasheet

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