Part Number : SVF740F

Function : 400V N-CHANNEL MOSFET

Manufactures : Silan Microelectronics

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Description :

SVF740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL Description SVF740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features ∗ 10A,400V,RDS(on)(typ)=0.45 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING INFORMATION Part No. SVF740T SVF740F Package TO-220-3L TO-220F-3L Marking SVF740T SVF740F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Rating SVF740T SVF740F 400 ±30 10 6.3 40 130 44 1.04 0.35 517 -55~+150 -55~+150 Unit V V A A W W/°C mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http:// REV:1.0 2012.09.26 Page 1 of 7 Silan Microelectronics SVF740T/F_Datasheet THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVF740T SVF740F 0.96 2.84 62.5 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) Test conditions VGS=0V, ID=250µA VDS=400V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA Min. 400 –2.0 RDS(on) VGS=10V, ID=5.0A — Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=25V,VGS=0V, f=1.0MHZ VDD=200V,ID=10A, R==25Ω (Note 2,3) VDS=320V,ID=10A, VGS=10V (Note 2,3) Typ. Max. -1.0 ±100 4.0 Unit V µA nA V 0.45 0.60 Ω 801 118.5 pF 5.06 15.44 — 38.60 — ns 35.12 — 28.16 — 16.18 — 4.77 — nC 7.18 — SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Continuous Source Current Pulsed Source Current IS Integral Reverse P-N Junction Diode in the ISM MOSFET Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: VSD IS=10A,VGS=0V Trr IS=10A,VGS=0V, Qrr dIF/dt=100A/µS (Note 2) 1. L=30 mH, IAS=5.30A, VDD=1 […]

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SVF740F Datasheet

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