SVF7N65F – 650V N-CHANNEL MOSFET

Part Number : SVF7N65F

Function : 650V N-CHANNEL MOSFET

Manufactures : Silan Microelectronics

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Description :

SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A, 10 denotes 10A, 08 denotes 0.8A N denotes N Channel Package information. Example:T:TO-220;F:TO-220F. Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V. Special Features indication, May be omitted. Example: E denotes embeded ESD structure ORDERING INFORMATION Part No. SVF7N65T SVF7N65F Package TO-220-3L TO-220F-3L Marking SVF7N65T SVF7N65F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2011.02.15 Page 1 of 8 SVF7N65T/F_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD EAS TJ Tstg 145 1.16 435 -55~+150 -55~+150 Ratings SVF7N65T 650 ±30 7.0 4.0 28 46 0.37 SVF7N65F Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Ratings SVF7N65T 0.86 62.5 SVF7N65F 2.7 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=520V, ID=7.0A, VGS=10V (Note 2,3) Test conditions VGS=0V, ID=250µA VDS=650V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA VGS=10V, ID=3.5A VDS=25V,VGS=0V, f=1.0MHZ Min. 650 –2.0 ———–Typ. —-1.1 917.7 98.6 1.90 29.00 48.00 39.00 33.00 15.50 5.40 4.50 Max. -10 ±100 4.0 1.4 ———-nC ns pF Unit V µA nA V Ω VDD=10V, RG=25Ω, ID=7.0A (Note 2,3) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2011.02.15 Page 2 of 8 SV […]

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SVF7N65F Datasheet


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