TK6P60W PDF Datasheet – 600V, N-Channel MOSFET

Part Number : TK6P60W

Function : 600V, Silicon N-Channel MOSFET

Package : D-PAK Type

Manufactures : Freescale

Images :

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Description :

This is 600V, Silicon N-Channel MOS (DTMOS)

Applications :

1. Switching Voltage Regulators

Features :

Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 600 ±30 6.2 24.8 60 84 1.6 6.2 24.8 150 -55 to 150  W mJ A A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 1/9 www.freescale.net.cn Free Datasheet http:/// 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Rth(ch-c) Max 2.09 Unit /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 57.6 mH, RG = 25 Ω, IAR = 1.6 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2/9 www.freescale.net.cn Free Datasheet http:/// 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness Symbol Ciss Crss Coss Co(er). […]

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TK6P60W Datasheet