TK6P60W – Silicon N-Channel MOS

Part Number : TK6P60W

Function : Silicon N-Channel MOS

Manufactures : Freescale

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TK6P60W image

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Description :

TK6P60W MOSFETs Silicon N-Channel MOS (DTMOS) 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 600 ±30 6.2 24.8 60 84 1.6 6.2 24.8 150 -55 to 150  W mJ A A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 1/9 www.freescale.net.cn Free Datasheet http:/// 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Rth(ch-c) Max 2.09 Unit /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 57.6 mH, RG = 25 Ω, IAR = 1.6 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2/9 www.freescale.net.cn Free Datasheet http:/// 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.31 mA VGS = 10 V, ID = 3.1 A Min   600 2.7  Typ.     0.68 Max ±1 10  3.7 0.82 Ω V Unit µA 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness Symbol Ciss Crss Coss Co(er) rg tr ton tf toff dv/dt VDD = 0 to 400 V, ID = 3.1 A VDS = 0 to 400 V, VGS = 0 V VDS = OPEN, f = 1 MHz See Figure 6.2.1 Test Condition VDS = 300 V, VGS = 0 V, f = 1 MHz Min          25 Typ. 390 1.7 12 20 7.5 18 40 7 55  Max           V/ns Ω ns Unit pF Fig. 6.2.1 Switching Time Test Circuit 6. […]

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TK6P60W Datasheet


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