TTK2837 – Silicon N Channel Field Effect Transistor

Part Number : TTK2837

Function : Silicon N Channel Field Effect Transistor

Manufactures : Toshiba

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TTK2837 image

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pinout

Description :

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications • Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 10 µA (VDS = 500 V) • Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Unit: mm 15.9 MAX. 3.2 ± 0.2 2.0 1.0 9.0 4.5 20.0 ± 0.3 3.3 MAX. 2.0 20.5 ± 0.5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 20 80 280 470 20 28 150 −55 to 150 Unit V V A W mJ A mJ °C °C 2.0 ± 0.3 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. 1.8 MAX. 0.3 0.6 0.1 2.8 123 1. Gate 2. Drain(heat sink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth(ch-c) Rth(ch-a) 0.466 50 °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.0 mH, RG = 25 Ω, IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2 3 1 TTK2837 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol Test Condition IGSS IDSS V(BR)DSS Vth RDS(ON) ⎪Yfs⎪ Ciss Crss Coss VGS = ±30 V, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A VDS = 25 V, VGS = 0 V, f = 1 MHz tr 10 V VGS 0V ID = 10 A VOUT ton 10 Ω RL= 20 Ω tf VDD ≈ 400 V toff Duty ≤ 1%, tw = 10 µs Qg Qgs VDD ≈ 400 V, VGS = […]

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TTK2837 Datasheet


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