UP01213 – Silicon NPN epitaxial planar type

Part Number : UP01213

Function : Silicon NPN epitaxial planar type

Manufactures : Panasonic Semiconductor

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UP01213 image

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Description :

Composite Transistors UP01213 Silicon NPN epitaxial planar type 5 Unit: mm (0.30) 4 1.20±0.05 1.60±0.05 0.20 –0.02 +0.05 0.10±0.02 For digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 Display at No.1 lead (0.20) 5˚ • UNR1213 × 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 125 125 −55 to +125 Unit V V mA mW °C °C 1: Base (Tr1) 2: Emitter 3: Base (Tr2) 0 to 0.02 4: Collector (Tr2) 5: Collector (Tr1) SSMini5-F2 Package Marking Symbol: 9L Internal Connection (C1) 5 Tr1 R1 (47 kΩ) R2 R2 (47 kΩ) (47 kΩ) (C2) 4 Tr2 R1 (47 kΩ) 1 (B1) 2 (E) 3 (B2) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 3.5 V, RL = 1 kΩ −30% 0.8 47 1.0 150 4.9 0.2 +30% 1.2 80 0.25 Min 50 50 0.1 0.5 0.1 Typ Max Unit V V µA µA mA  V V V kΩ  MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 0.10 max ■ Basic Part Number 0.55±0.05 5˚ (0.20) Publication date: August 2004 SJJ00298AED 1 UP01213 PT  Ta 140 120 100 80 60 40 20 0 140 120 Ta = 25°C 0.9 mA IC  VCE Collector-emitter saturation voltage VCE(sat) (V) 100 IB = 1.0 mA 0.8 mA 0.6 mA 0.5 mA 0.4 mA 0.7 mA 80 60 40 0.1 mA 20 0 0.3 mA VCE(sat)  IC IC / IB = 10 Total power dissipation PT (mW) 10 Collector current IC (mA) 100 1 0.2 mA 0.1 Ta = 85°C 0.01 25°C −25°C 0 40 80 120 0 2 4 6 8 10 12 0.001 0.1 1 10 100 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (mA) hFE  IC 350 300 250 200 150 100 50 0 Ta = 85°C VCE = 10 V IO  VIN 100 VO = 5 V Ta = 25°C 100 VIN  IO VO = 0.2 V Ta = 25°C Forward current transfer ratio hFE 10 Input voltage VIN (V) 0 2 4 6 8 10 25°C Output current IO (mA) 10 −25°C 1 1 1 10 100 0.1 0.1 1 10 100 Collector current IC (mA) Input voltage VIN (V) Output current IO (mA) 2 SJJ00298 […]

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UP01213 Datasheet


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