UTC8050S – NPN Epitaxial Silicon Transistor

Part Number : UTC8050S

Function : NPN Epitaxial Silicon Transistor

Manufactures : Unisonic Technologies

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Description :

UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to UTC 8550S 1: EMITTER 2: COLLECTOR TO-92 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25℃) Collector Current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG VALUE 30 20 5 1 700 150 -65 ~ +150 UNIT V V V W mA °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob TEST CONDITIONS Ic=100µA,IE=0 Ic=1mA,IB=0 IE=100µA,Ic=0 VCB=30V,IE=0 VEB=5V,Ic=0 VCE=1V,Ic=1mA VCE=1V,Ic=150 mA VCE=1V,Ic=500mA Ic=500mA,IB=50mA Ic=500mA,IB=50mA VCE=1V,Ic=10mA VCE=10V,Ic=50mA VCB=10V,IE=0 f=1MHz MIN 30 20 5 TYP MAX UNIT V V V uA nA 1 100 100 120 40 110 400 0.5 1.2 1.0 100 9.0 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance V V V MHz pF UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-011,A UTC 8050S RANK RANGE NPN EPITAXIAL SILICON TRANSISTOR C 120-200 D 160-300 E 280-400 CLASSIFICATION OF hFE2 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics 0.5 Fig.2 DC current Gain 3 10 2 10 Fig.3 Base-Emitter on Voltage Ic,Collector current (mA) IB=3.0mA Ic,Collector current (mA) 0.4 IB=2.0mA 0.3 HFE, DC current Gain IB=2.5mA VCE=1V 2 10 VCE=1V 1 10 IB=1.5mA IB=1.0mA IB=0.5mA 0.2 1 10 0 10 0.1 0 0 0.4 0.8 1.2 1.6 2.0 0 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 0.2 0.4 0.6 0.8 1.0 Collector-Emitter voltage ( V) Ic,Collector current (mA) Base-Emitter voltage (V) Fig.4 Saturation voltage 4 10 3 10 Fig.5 Current gain-bandwidth product Current Gain-bandwidth T(MHz) product,f VCE=10V 2 10 Fig.6 Collector output Capacitance Cob,Capacitance (pF) 3 10 Saturation voltage (mV) Ic=10*IB VBE(sat) 3 10 2 10 f=1MHz IE=0 2 10 1 10 1 10 VCE(sat) 1 10 -1 10 0 10 1 10 2 10 3 10 0 10 0 10 1 10 2 10 3 10 0 10 0 10 1 10 2 10 3 10 Ic,Collector current (mA) Ic,Collector current (mA) Collector-Base voltage (V) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-011,A […]

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UTC8050S Datasheet


 
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