Part Number: W9NK95Z, STW9NK95Z
Function: N-Channel, 950V, 7A, MOSFET
Package: TO-247 type
Manufacturer: STMicroelectronics
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Description
STW9NK95Z N-channel 950 V – 1.15 Ω – 7 A – TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STW9NK95Z VDSS RDS(on) Max ID 950 V < 1.38 Ω 7 A Pw 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code STW9NK95Z Marking 9NK95Z Package TO-247 Packaging Tube July 2008 Rev 2 1/12 www.st.com 12 Contents Contents STW9NK95Z 1 Electrical ratings . . 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 STW9NK95Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS VGS ID ID IDM(1) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating Factor Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ) dv/dt(2) Peak diode recovery voltage slope TJ Operating junction temperature Tstg Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 7 A, di/dt ≤ 100 A/µs,VDD ≤ 80% V(BR)DSS Table 3. Thermal data Symbol Parameter Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Table 4. Avalanche characteristics Symbol Parameter Avalanche current, repetitive or not-repetitive IAS (pulse width limited by TJ Max) Single pulse avalanche energy (starting EAS TJ=25 °C, ID=IAS, VDD=50 V) (see Figure 17)and (see Figure 18) Electrical ratings Value 950 ± 30 7 4.41 28 160 1.28 4000 4.5 -55 to 150 Unit V V A A A W W/°C V V/ns °C Value 0.78 50 300 Value 7 300 Unit °C/W °C/W °C Unit A mJ 3/12 Electrical characteristics 2 Electrical characteristics STW9NK95Z (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage drain current (VGS = 0) IGSS VGS(th) RDS(on) Gate body leakage current (VDS = 0) Gate threshold [...]
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