Part Number: A1516
Function: -180V, -12A, SILICON PNP TRANSISTOR
Package: TO-3PI Type
Manufacturer: ISC ( INCHANGE Semiconductor )
Images:
Description
A1516 is -180V, -12A, Silicon PNP Power Transistor. A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor.
1. Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector).
2. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. The emitter is negative relative to the base, and the collector is positive relative to the base.
3. Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.
Features
1. Collector-Emitter Breakdown Voltage: V(BR)CEO= -180V(Min)
2. Good Linearity of hFE
3. Complement to Type 2SC3907
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = – 180 V
2. Collector to Emitter Voltage: Vceo = – 180 V
3. Emitter to Base Voltage: Vebo = – 5 V
4. Collector Current: Ic = – 12 A
5. Total Dissipation: Pc = 130 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperatue: Tsg = -55 ~ +150°C
Applications:
1. Power amplifier applications
2. Recommend for 80W high fidelity audio frequency amplifier output stage applications