A1941 Datasheet – Vceo=-140V, PNP Power Transistor – Toshiba

Part Number : A1941

Function : Silicon PNP Triple Diffused Type

Package : TO- 3PN

Manufactures : Toshiba

Image

a1941-pnp-power-transistor

Features

1. High breakdown voltage: VCEO = −140 V (min)
2. Complementary to 2SC5198
3. Recommended for 70-W high-fidelity audio frequency amplifier output stage.

 

Pinout

a1941-datasheet-pinout

 

Absolute Maximum Ratings (Tc = 25°C)

1. Collector-base voltage VCBO −140 V
2. Collector-emitter voltage VCEO −140 V
3. Emitter-base voltage VEBO −5 V
4. Collector current IC −10 A
5. Base current IB −1 A
6. Collector power dissipation (Tc = 25°C) PC 100 W
7. Junction temperature Tj 150 °C
8. Storage temperature range Tstg −55 to 150 °C

 

Reference PDF : https://www.electronic.it/open2b/var/product-files/567.pdf

A1941 Datasheet