Part Number : HM2301B, Si2301DS
Marking : A1SHB
Function : P-Channel Trench Power MOSFET
Package : SOT-23 Type
Manufactures : H&M Semiconductor, Vishay
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Description
The A1SHB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
Pinout
Features
● VDS = -20V,ID =-2.5A
RDS(ON) < 160mΩ @ VGS =-4.5V
RDS(ON) < 230mΩ @ VGS =-2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● Battery protection
● Load switch
● Power management
Maximum ratings
1. Drain-Source Voltage : VDS = -20
2. Gate-Source Voltage : VGS = ±8V
3. Continuous Drain Current : ID = -2.3
4. Maximum Power Dissipation : PD = 0.35 W
