A1SHB Datasheet – P-Channel Trench Power MOSFET

Part Number : HM2301B, Si2301DS

Marking : A1SHB

Function : P-Channel Trench Power MOSFET

Package : SOT-23 Type

Manufactures : H&M Semiconductor, Vishay

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A1SHB-datasheet-pdf


Description

The A1SHB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.

 

Pinout
A1SHB-pinout

Features

● VDS = -20V,ID =-2.5A
RDS(ON) < 160mΩ @ VGS =-4.5V
RDS(ON) < 230mΩ @ VGS =-2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package

Application
● Battery protection
● Load switch
● Power management

Maximum ratings

1. Drain-Source Voltage : VDS = -20
2. Gate-Source Voltage : VGS = ±8V
3. Continuous Drain Current : ID = -2.3
4. Maximum Power Dissipation : PD = 0.35 W

A1SHB Datasheet